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| DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS PA1712 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. 8 5 PACKAGE DIMENSIONS (in millimeter) FEATURES * Low On-Resistance RDS(on)1 = 20 m MAX. (VGS = -10 V, ID = -4.0 A) RDS(on)2 = 48 m MAX. (VGS = -4 V, ID = -4.0 A) * Low Ciss Ciss = 2700 pF TYP. 1 4 5.37 MAX. +0.10 -0.05 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain * Built-in G-S Protection Diode 1.44 6.0 0.3 4.4 0.8 (Power SOP8) 1.8 MAX. * Small and Surface Mount Package 0.15 0.05 MIN. 0.5 0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 -0.05 0.12 M ABSOLUTE MAXIMUM RATINGS (TA = 25 C, all terminals are connected) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Notes1 Notes2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg -30 +20 +8.0 +32 2.0 150 -55 to +150 V V A A W C C Gate Protection Diode Gate Drain Total Power Dissipation (TA = 25 C) Channel Temperature Storage Temperature Notes 1. 2. Body Diode Source PW 10 s, Duty Cycle 1 % Mounted on ceramic substrate of 1200 mm2 x 0.7 mm The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device acutally used, an addtional protection circuit is externally required if voltage exceeding the rated voltage may be applied to this device. Document No. D11495EJ1V0DS00 (1st edition) Date Published December 1996 N Printed in Japan (c) 1996 PA1712 ELECTRICAL CHARACTERISTICS (TA = 25 C, all terminals are connected) CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on)1 RDS(on)2 VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = -10 V, ID = -4.0 A VGS = -4 V, ID = -4.0 A VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -4.0 A VDS = -30 V, VGS = 0 VGS = +20 V, VDS = 0 VDS = -10 V VGS = 0 f = 1 MHz ID = -4.0 A VGS(on) = -10 V VDD = -15 V RG = 10 ID = -8.0 A VDD = -24 V VGS = -10 V IF = 8.0 A, VGS = 0 IF = 8.0 A, VGS = 0 di/dt = 50 A/s 2700 1000 380 30 150 250 200 55 7.5 14.5 0.80 60 40 -1.0 6 MIN. TYP. 15 27 -1.7 13 -10 +10 MAX. 20 48 -2.5 UNIT m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Switching Time Test Circuit 2 Gate Charge D.U.T. RL RG VGS VGS Wave Form D.U.T. PG. 10 % 0 ID VGS (on) 90 % IG = 2 mA RL RG = 10 VDD 90 % 90 % ID ID Wave Form PG. 50 VDD VGS 0 t t = 1 s Duty Cycle < 1 % = 0 10 % td (on) ton tr td (off) toff 10 % tf 2 PA1712 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.8 PT - Total Power Dissipation - W 100 80 60 40 20 2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80 Mounted on ceramic substrate of 1 200 mm2 x 0.7 mm 0 20 40 60 80 100 120 140 160 100 120 140 160 TA - Ambient Temperature - C TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA -100 d ite V) Lim-10 n) o = S( S R D t VG (a ID(pulse) 1 m s Note: Mounted on ceramic substrate of 1 200 mm2 x 0.7 mm ID - Drain Current - A -10 ID(DC) 10 10 Po we m s 0 m s -1 rD iss DC ipa tio n Lim -0.1 -0.1 TA = 25 C Single Pulse -1 ite d -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W 100 10 1 0.1 Mounted on ceramic substrate of 1 200 mm2 x 0.7 mm Single Pulse Channel to Ambient 100 1m 10 m 100 m 1 10 100 1 000 0.01 0.001 10 PW - Pulse Width - s 3 PA1712 FORWARD TRANSFER CHARACTERISTICS -100 Pulsed -50 ID - Drain Current - A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed ID - Drain Current - A -10 Tch = -25 C 25 C 75 C -1 125 C -40 VGS = -10 V -30 -20 -10 -4 V -4.5 V -0.1 VDS = -10 V 0 -1 -2 -3 -4 0 -0.4 -0.8 -1.2 -1.6 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S -100 Tch = -25 C 25 C 75 C 125 C VDS = -10 V Pulsed RDS(on) - Drain to Source On-State Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 60 Pulsed -10 40 ID = -4.0 A -1 20 -0.1 -1 -10 -100 0 -5 -10 -15 ID - Drain Current - A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 Pulsed VGS(off) - Gate to Source Cutoff Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE -2.0 VDS = -10 V ID = -1 mA 30 VGS = -4 V VGS = -4.5 V -1.5 20 -1.0 10 VGS = -10 V -0.5 0 0 -50 0 50 100 150 Tch - Channel Temperature - C -1 -10 ID - Drain Current - A -100 4 PA1712 RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ISD - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 40 VGS = -4 V -4.5 V 100 VGS = -4 V 10 30 -10V 20 VGS = 0 1 10 ID = -4.0 A - 50 0 50 100 150 0.1 0 0.5 1.0 1.5 0 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 10 000 VGS = 0 f = 1 MHz Ciss 1 000 td(off) tf 100 tr td(on) 10 1 000 Coss Crss 100 10 -0.1 -1 -10 -100 1 -0.1 -1 VDD = -15 V VGS(on) = -10 V RG = 10 -10 -100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 trr - Reverse Recovery Time - ns di/dt = 50 A/s VGS = 0 VDS - Drain to Source Voltage - V -30 10 VDD = -24 V -15 V -7 V VGS -12 -10 -8 -6 -20 1 -10 VDS 0 20 40 60 80 -4 -2 0 0.1 0.1 1 10 100 IF - Diode Current - A QG - Gate Charge - nC 5 VGS - Gate to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS -40 ID = -8 A -14 PA1712 REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Application circuits using Power MOS FET Safe operating area of Power MOS FET Document No. TEI-1202 C11531E C10535E M10943X MEI-1202 TEA-1035 TEA-1037 6 PA1712 [MEMO] 7 PA1712 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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